IEEE Transactions on Nuclear Science · 1969 · 60 citations · 16 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDevice ModelingDopingSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesElectrical PropertiesElectrical Properties AnalysisGate DielectricsInfrared Absorption SpectraInfrared Absorption SpectroscopyInterface State KineticsSilicon DioxideSilicon Doping
Interface-state densities and MOS transistor characteristics dependent upon such states have been studied as a function of radiation dose and type. Special MOS devices possessing doped silicon-dioxide layers as well as undoped "control" devices have been utilized. Infrared absorption measurements were performed on silicon-dioxide samples before and after exposure to radiation, as well as for doped and undoped samples. A model based on structural modifications of the silicon-dioxide-films is proposed for the build-up of interface-states resulting from exposure to radiation. It has been found that with the proper doping of the silicon-dioxide films, the build-up of such states can be reduced. Using such doped gate-dielectrics, planar semiconductor devices much less sensitive to radiation have been fabricated.
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On the Surface States Associated with a Periodic Potential
W. Shockley · Physical Review · 1939 · 1.2K citations
DENSITY OF SiO2–Si INTERFACE STATES
Peter V. Gray, D.M. Brown · Applied Physics Letters · 1966 · 406 citations · Full text