Interface State Kinetics

Interface State Kinetics is a theoretical framework that characterizes the dynamic behavior of electronic states at the semiconductor-dielectric interface in MOS capacitors by modeling the time-dependent capture and emission processes of charge carriers involving interface traps.

292

Publications

13.7K

Citations

880

Authors

294

Institutions

Publications per year

2017–2026

42

Authors

880

  1. HE
    H. E. Boesch

    Adelphi Laboratory Center, United States

    8 publications · 806 citations

    8

    h-index

  2. PW
    P.S. Winokur

    Sandia National Laboratories, United States

    7 publications · 804 citations

    7

    h-index

  3. DS
    D. S. Ang

    Nanyang Technological University, Singapore

    6 publications · 174 citations

    6

    h-index

  4. DV
    D. Vuillaume

    Institut d'électronique de microélectronique et de nanotechnologie, France

    5 publications · 101 citations

    5

    h-index

  5. SA
    S. A. Lyon

    Princeton University, United States

    5 publications · 205 citations

    5

    h-index

1–5 of 880

Venues

  1. Applied Physics Letters

    40 publications · 1.8K citations

    23

    h-index

  2. Journal of Applied Physics

    34 publications · 1.7K citations

    22

    h-index

  3. IEEE Transactions on Nuclear Science

    24 publications · 1.9K citations

    19

    h-index

  4. Applied Surface Science

    11 publications · 414 citations

    11

    h-index

  5. Solid-State Electronics

    12 publications · 1.2K citations

    11

    h-index

1–5