Interface State Kinetics
Interface State Kinetics is a theoretical framework that characterizes the dynamic behavior of electronic states at the semiconductor-dielectric interface in MOS capacitors by modeling the time-dependent capture and emission processes of charge carriers involving interface traps.
292
Publications
13.7K
Citations
880
Authors
294
Institutions
Publications per year
2017–2026
42
Parents
292
1–5 of 292
880
8
h-index
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Institut d'électronique de microélectronique et de nanotechnologie, France
5 publications · 101 citations
5
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5
h-index
1–5 of 880
294

Centre National de la Recherche Scientifique
Paris, France
12 h-index
32 publications
1.5K citations
IMEC
Leuven, Belgium
10 h-index
32 publications
1.6K citations

United States Naval Research Laboratory
Washington, United States
9 h-index
17 publications
748 citations
IBM Research - Thomas J. Watson Research Center
Yorktown Heights, United States
7 h-index
14 publications
1.3K citations
Princeton University
Princeton, United States
6 h-index
16 publications
819 citations
KU Leuven
Leuven, Belgium
6 h-index
11 publications
759 citations
Nanyang Technological University
Singapore, Singapore
6 h-index
14 publications
436 citations
University of Illinois Urbana-Champaign
Urbana, United States
6 h-index
14 publications
744 citations
1–8 of 294
40 publications · 1.8K citations
23
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34 publications · 1.7K citations
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24 publications · 1.9K citations
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11 publications · 414 citations
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12 publications · 1.2K citations
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