Japanese Journal of Applied Physics · 2012 · 13 citations · 21 references
EngineeringElectron-beam LithographyMechanical EngineeringPattern TransferResist ShrinkageBeam LithographyPrinted ElectronicsRelative Critical DimensionNanolithographyNanolithography MethodMaterials ScienceMold Pattern SizesNanotechnologyCd ErrorsMicroelectronics3D PrintingSpecific ResistanceFlexible ElectronicsMicrofabricationApplied Physics
Relative critical dimension (CD) errors in nanoimprint lithography are estimated by numerical simulation for various pattern sizes. From the results, transfer functions to estimate the CD errors are proposed, which are expressed similarly to a low- or high-pass filter in terms of the spatial frequency. Using the transfer functions, the mold pattern sizes are corrected to compensate the shrinkage.
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Imprint of sub-25 nm vias and trenches in polymers
Stephen Y. Chou, Peter R. Krauss, Preston J. Renstrom · Applied Physics Letters · 1995 · 2.7K citations