A study on strong memory effects for Mg doping in GaN metalorganic chemical vapor deposition

P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

Hiroshi Amano, M. Kito, Kazumasa Hiramatsu et al. · Japanese Journal of Applied Physics · 1989 · 2K citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Isamu Akasaki, Hiroshi Amano, Yasuo Koide et al. · Journal of Crystal Growth · 1989 · 688 citations

Engineering, Materials Engineering, Materials Science +13

Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers

Shuji Nakamura, Masayuki Senoh, Takashi Mukai · Japanese Journal of Applied Physics · 1991 · 433 citations

Engineering, Electrical Engineering, Materials Science +17

Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPE

Hiroshi Amano, Masahiro Kitoh, Kazumasa Hiramatsu et al. · Journal of The Electrochemical Society · 1990 · 212 citations

Engineering, Materials Engineering, Materials Science +17

Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer

Hiroshi Amano, Tsunemori Asahi, Isamu Akasaki · Japanese Journal of Applied Physics · 1990 · 200 citations

Engineering, Materials Engineering, Materials Science +14