Tsunemori Asahi

Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer

Hiroshi Amano, Tsunemori Asahi, Isamu Akasaki · Japanese Journal of Applied Physics · 1990 · 200 citations

Aluminium Nitride, Room Temperature, Gan Film Grown +11

Growth of Si-doped AlxGa1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy

Hiroshi Murakami, Tsunemori Asahi, Hiroshi Amano et al. · Journal of Crystal Growth · 1991 · 72 citations

Materials Engineering, Materials Science, Aluminium Nitride +8

GaN epitaxial growth on neodium gallate substrates

Hiroyuki Okazaki, A. Arakawa, Tsunemori Asahi et al. · Solid-State Electronics · 1997 · 24 citations

Applied Physics, Gan Epitaxial Growth, Gan Power Device

Stimulated emission in MOVPE-grown GaN film

Hiroshi Amano, Tsunemori Asahi, M. Kito et al. · Journal of Luminescence · 1991 · 17 citations

Movpe-grown Gan Film, Electrical Engineering, Engineering +3