Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer

Abstract

We report the first observation of the room temperature stimulated emission near UV from a GaN film which was grown by metalorganic vapor phase epitaxy on a (0001) sapphire substrate using an AlN buffer layer. This indicates that the GaN film is promising for the realization of an UV laser diode.