Conducting atomic force microscopy studies on local electrical properties of ultrathin SiO2 films

Conducting atomic force microscopy study of silicon dioxide breakdown

S. J. O’Shea, R. M. Atta, M. P. Murrell et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1995 · 147 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Spatially resolved electrical measurements of SiO2 gate oxides using atomic force microscopy

M. P. Murrell, Mark E. Welland, S. J. O’Shea et al. · Applied Physics Letters · 1993 · 129 citations

Engineering, Electrical Engineering, Materials Science +17

Electrical stress-induced variable range hopping conduction in ultrathin silicon dioxides

Kenji Okada, Kenji Taniguchi · Applied Physics Letters · 1997 · 125 citations

Engineering, Materials Science, Physics +17

High resolution Fowler-Nordheim field emission maps of thin silicon oxide layers

Todd G. Ruskell, Richard K. Workman, Dong Chen et al. · Applied Physics Letters · 1996 · 78 citations

Natural Sciences, Electrical Engineering, Materials Science +16

Evaluation of interface potential barrier heights between ultrathin silicon oxides and silicon

S. Horiguchi, Hideo Yoshino · Journal of Applied Physics · 1985 · 71 citations

Engineering, Electrical Engineering, Materials Science +17