Tsunenori Sakamoto - Concepedia

Author

Tsunenori Sakamoto

Electrotechnical Institute

Also Known As

T. Sakamoto, Tsunenori SAKAMOTO, Tsunenori Sakamoto, Tsunenori Sakamoto Tsunenori Sakamoto

Publications

1.3K

Citations

H-Index

Concepts

All Affiliations

Electrotechnical Institute Tohoku University

About

Tsunenori Sakamoto is an author at Electrotechnical Institute specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	28	1.2K
2	Applied Physics	21	28	1.2K
3	Chemistry	3	3	153
4	Materials Engineering	3	3	147
5	Electrical Engineering	1	1	140

Tsunenori Sakamoto

Publications

1.2K

Citations

H-Index

Page 1

	Year	Citations
Si(001)-2×1 Single-Domain Structure Obtained by High Temperature Annealing Tsunenori Sakamoto, Gen Hashiguchi Japanese Journal of Applied Physics Materials ScienceSemiconductorsSurface CharacterizationEngineeringCrystalline Defects	1986	168
Phase-Locked Epitaxy Using RHEED Intensity Oscillation Tsunenori Sakamoto, Hideo Funabashi, Kimihiro Ohta, Japanese Journal of Applied Physics Materials ScienceIi-vi SemiconductorElectrical EngineeringEpitaxial GrowthEngineering	1984	140
Reflection High-Energy Electron Diffraction Intensity Oscillations during Ge<sub>x</sub>Si<sub>1-x</sub> MBE Growth on Si(001) Substrates K. SAKAMOTO, Tsunenori Sakamoto, Satoru Nagao, Japanese Journal of Applied Physics Materials EngineeringMaterials ScienceLayer ThicknessEpitaxial GrowthRheed Intensity Oscillation	1987	95
Which Surfactant Shall We Choose for the Heteroepitaxy of Ge/Si(001)? –Bi as a Surfactant with Small Self-Incorporation– Kunihiro Sakamoto, Ken'ichi Kyoya, Kazushi Miki, Japanese Journal of Applied Physics Surface CharacterizationEngineeringSurface ChemistryNanotechnologySurface Analysis	1993	90
Layer-by-layer sublimation observed by reflection high-energy electron diffraction intensity oscillation in a molecular beam epitaxy system Takeshi Kojima, Naoyuki J. Kawai, Tadashi Nakagawa, Applied Physics Letters Materials ScienceSemiconductorsLayer-by-layer SublimationAluminium NitrideEngineering	1985	86
RHEED studies of Si(100) surface structures induced by Ga evaporation Tsunenori Sakamoto, Hitoshi Kawanami Surface Science Materials ScienceSurface CharacterizationEngineeringSurface AnalysisSurface Science	1981	59
Is the c(4×4) reconstruction of Si(001) associated with the presence of carbon? Kazushi Miki, Kunihiro Sakamoto, Tsunenori Sakamoto Applied Physics Letters Materials ScienceEngineeringHydrogen-terminated SiCrystalline DefectsNanoelectronics	1997	46
Structural Model for the Negative Electron Affinity Surface of O/Cs/Si(001)2×1 T. Abukawa, Shozo Kono, Tsunenori Sakamoto Japanese Journal of Applied Physics Materials ScienceSemiconductorsWide-terrace Single-domain SiSurface CharacterizationEngineering	1989	40
Si epitaxy by molecular beam method Tsunenori Sakamoto, Eiichi Suzuki, Akira Shoji, Surface Science Materials ScienceEngineeringNanoelectronicsApplied PhysicsMolecular Beam Epitaxy	1979	39
Observation of Direct Band Gap Properties in Ge<sub>n</sub>Si<sub>m</sub> Strained-Layer Superlattices Hajime Okumura, Kazushi Miki, S. Misawa, Japanese Journal of Applied Physics EngineeringDirect Band GapSilicon On InsulatorIi-vi SemiconductorOptical Properties	1989	35

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