Si(001)-2×1 Single-Domain Structure Obtained by High Temperature Annealing

Abstract

Si(001)-2×1 single-domain structure has been observed by reflection high-energy electron diffraction (RHEED) after a substrate annealing at a temperature of 1000°C for 20 min. This implies surface steps have been changed from monatomic layer to biatomic layer height by the annealing. It was found that the single-domain 2×1 surface structure is a necessary condition to observe stable RHEED intensity oscillations on the Si(001) surface during the growth.