Naoyuki J. Kawai - Concepedia

Author

Naoyuki J. Kawai

Renesas Electronics (Japan)

Also Known As

Naoyuki J. Kawai, Naoyuki Kawai

Publications

374

Citations

H-Index

Concepts

All Affiliations

Renesas Electronics (Japan)Hitachi (Japan)Electrotechnical Institute

About

Naoyuki J. Kawai is an author at Renesas Electronics (Japan) specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	322
2	Applied Physics	7	7	322
3	Chemistry	3	3	45
4	Natural Sciences	2	2	33
5	Electrical Engineering	2	2	170

Naoyuki J. Kawai

Publications

361

Citations

H-Index

Page 1

	Year	Citations
Phase-Locked Epitaxy Using RHEED Intensity Oscillation Tsunenori Sakamoto, Hideo Funabashi, Kimihiro Ohta, Japanese Journal of Applied Physics Materials ScienceIi-vi SemiconductorElectrical EngineeringEpitaxial GrowthEngineering	1984	140
Layer-by-layer sublimation observed by reflection high-energy electron diffraction intensity oscillation in a molecular beam epitaxy system Takeshi Kojima, Naoyuki J. Kawai, Tadashi Nakagawa, Applied Physics Letters Materials ScienceSemiconductorsLayer-by-layer SublimationAluminium NitrideEngineering	1985	86
A new material platform of Si photonics for implementing architecture of dense wavelength division multiplexing on Si bulk wafer Ziyi Zhang, Motoki Yako, K. Ju, Science and Technology of Advanced Materials	2017	39
GaAs/Al<sub>x</sub>Ga<sub>1-x</sub>As Multilayer Reflector for Surface Emitting Laser Diode Mutsuo Ogura, Toshio Hata, Naoyuki J. Kawai, Japanese Journal of Applied Physics Multilayer ReflectorPhotonicsElectrical EngineeringOptical MaterialsMultilayer Reflectors	1983	30
Material Microcharacterization of Sol–Gel Derived HfO<sub>2</sub>Thin Films on Silicon Wafers Hirofumi Shimizu, Naoyuki J. Kawai, Toshikazu Nishide Japanese Journal of Applied Physics Materials ScienceHfo2 FilmsMaterial AnalysisEngineeringWafer Scale Processing	2004	21
Compositional Transformation between Cu Centers by Annealing in Cu-Diffused Silicon Crystals Studied with Deep-Level Transient Spectroscopy and Photoluminescence Minoru Nakamura, Susumu Murakami, Naoyuki J. Kawai, Japanese Journal of Applied Physics Crystal StructureEngineeringCrystal Growth TechnologySolid-state ChemistryChemistry	2009	18
Concentration Study of Deep-Level Cu Center in Cu-Diffused Si Crystals by Deep-Level Transient Spectroscopy and Photoluminescence Measurements Minoru Nakamura, Susumu Murakami, Hiroshi Hozoji, Japanese Journal of Applied Physics Materials ScienceDeep-level Transient SpectroscopyCu CenterEngineeringDlts Center	2006	15
Diffusion-Temperature-Dependent Formation of Cu Centers in Cu-Saturated Silicon Crystals Studied by Photoluminescence and Deep-Level Transient Spectroscopy Minoru Nakamura, Susumu Murakami, Naoyuki J. Kawai, Japanese Journal of Applied Physics Dlts PeaksOptical MaterialsEngineeringDlts PeakChemistry	2008	12

Page 1