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GaAs/Al<sub>x</sub>Ga<sub>1-x</sub>As Multilayer Reflector for Surface Emitting Laser Diode
30
Citations
7
References
1983
Year
Multilayer ReflectorPhotonicsElectrical EngineeringOptical MaterialsMultilayer ReflectorsEngineeringSemiconductor LasersOptical PropertiesCompound SemiconductorApplied PhysicsLaser ApplicationsLaser MaterialCavity MirrorsSurface-emitting LasersOptoelectronicsGraded-reflectivity MirrorsDepth-graded Multilayer CoatingAbsolute Reflectivity
GaAs/Al x Ga 1- x As multilayer reflectors (MLRs) were fabricated for the cavity mirrors of a surface emitting laser diode by using MBE technique. Absolute reflectivity of the fabricated MLR with 20 repetition pairs of GaAs–Al 0.5 Ga 0.5 As reaches 0.94. This means 18 times lower cavity loss than GaAs-air interface when used as cavity mirrors. Good agreement of the reflectivity between theory and experiments is demonstrated.
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