Japanese Journal of Applied Physics · 2004 · 21 citations · 2 references
Materials ScienceHfo2 FilmsMaterial AnalysisEngineeringWafer Scale ProcessingCrystalline DefectsMicrofabricationNanotechnologySurface ScienceApplied PhysicsMaterial MicrocharacterizationHfo2 FilmThin FilmsMolecular Beam EpitaxyEpitaxial GrowthCrystalline Hfo2Sol-gel SynthesisThin Film Processing
Upon sintering a sol–gel derived HfO2 film at 700°C, on the basis of high-resolution transmission electron microscope measurement combined with electron beam nanodiffraction, the HfO2 film was found to be crystallized in a monoclinic fcc (face centered cubic) structure. The measured interplanar spacing of the crystalline HfO2 on the (111) plane was determined to be 0.314 nm, which was close to the spacing of Si (111) planes, implying the possibility of the epitaxial growth of HfO2 films on Si (111).
2
High-resolution depth profiling in ultrathin Al2O3 films on Si
E. P. Gusev, M. Copel, E. Cartier et al. · Applied Physics Letters · 2000 · 412 citations
Materials Engineering, Materials Science, Ultrathin Al2o3 Films +13