Kimihiro Ohta - Concepedia

Author

Kimihiro Ohta

Electrotechnical Institute

Also Known As

Kimihiro OHTA, Kimihiro Ohta

Publications

545

Citations

H-Index

Concepts

All Affiliations

Electrotechnical Institute

About

Kimihiro Ohta is an author at Electrotechnical Institute specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	9	9	516
2	Engineering	8	8	315
3	Electrical Engineering	5	5	201
4	Natural Sciences	1	1	14
5	Chemistry	1	1	14

Kimihiro Ohta

Publications

516

Citations

H-Index

Page 1

	Year	Citations
Anisotropic surface migration of Ga atoms on GaAs (001) Kimihiro Ohta, Takeshi Kojima, Tadashi Nakagawa Journal of Crystal Growth Anisotropic Surface MigrationPhysicsApplied PhysicsGallium OxideMolecular Beam Epitaxy	1989	201
Phase-Locked Epitaxy Using RHEED Intensity Oscillation Tsunenori Sakamoto, Hideo Funabashi, Kimihiro Ohta, Japanese Journal of Applied Physics Materials ScienceIi-vi SemiconductorElectrical EngineeringEpitaxial GrowthEngineering	1984	140
Layer-by-layer sublimation observed by reflection high-energy electron diffraction intensity oscillation in a molecular beam epitaxy system Takeshi Kojima, Naoyuki J. Kawai, Tadashi Nakagawa, Applied Physics Letters Materials ScienceSemiconductorsLayer-by-layer SublimationAluminium NitrideEngineering	1985	86
Sharp Resonance Characteristics in Triple-Barrier Diodes with a Thin Undoped Spacer Layer Tadashi Nakagawa, Takahiro Fujita, Yutaka Matsumoto, Japanese Journal of Applied Physics Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringSemiconductor DeviceEngineering	1987	20
Raman Scattering Determination of Free Carrier Concentration and Surface Depletion Layer in (100) p-GaAs Grown by Molecular-Beam Epitaxy Ryoichi Fukasawa, Moriaki Wakaki, Kimihiro Ohta, Japanese Journal of Applied Physics Electrical EngineeringEngineeringSurface Depletion LayerOptical PropertiesApplied Physics	1986	17
Raman Scattering Study on Unoxidized Antimony in Anodic Oxide-Films of InSb Tadashi Nakagawa, Kimihiro Ohta, Naoki Koshizuka Japanese Journal of Applied Physics Materials ScienceSurface CharacterizationAntimony InclusionEngineeringMaterial Analysis	1980	14
Analysis of Raman Spectra from Heavily Doped<i>p</i>-GaAs Ryoichi Fukasawa, Shin-ichi Katayama, Akira Hasegawa, Journal of the Physical Society of Japan Raman SpectraOptical MaterialsEngineeringSurface-enhanced Raman ScatteringOptical Characterization	1988	14
Resonant Magnetotunneling in AlGaAs/GaAs Triple Barrier Diodes Hiroshi Bando, Tadashi Nakagawa, Hiroshi Tokumoto, Japanese Journal of Applied Physics Triple Barrier DiodeSpintronicsElectrical EngineeringEngineeringTunneling Microscopy	1987	13
Liquid Phase Epitaxial Growth of Ga<sub><i>x</i></sub>In<sub>1-<i>x</i></sub>Sb by Vertical Dipping Method Kimihiro Ohta, Mitsuo Kawashima, Toshihiko Tanuma, Japanese Journal of Applied Physics Materials ScienceMaterials EngineeringElectrical EngineeringLayer ThicknessEngineering	1977	11

Page 1