Raman Scattering Determination of Free Carrier Concentration and Surface Depletion Layer in (100) p-GaAs Grown by Molecular-Beam Epitaxy - Concepedia

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Raman Scattering Determination of Free Carrier Concentration and Surface Depletion Layer in (100) p-GaAs Grown by Molecular-Beam Epitaxy

17

Citations

9

References

1986

Year

Ryoichi Fukasawa, Moriaki Wakaki, Kimihiro Ohta, Hajime Okumura

Japanese Journal of Applied Physics

Electrical EngineeringEngineeringSurface Depletion LayerOptical PropertiesApplied PhysicsFree Carrier ConcentrationSemiconductor MaterialMolecular Beam EpitaxyEpitaxial GrowthCompound SemiconductorRaman Scattering Determination

References

	Year	Citations

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