Sharp Resonance Characteristics in Triple-Barrier Diodes with a Thin Undoped Spacer Layer

Abstract

The effect of an undoped spacer layer up to 300 A thick adjoining a triple-barrier diode is studied. Larger peak-to-valley ratios and smaller full-widths at half maximum (FWHM), compared to conventional triple-barrier diodes, are obtained for the resonant current-peaks in these samples. It is explained that a main cause of the peak broadening is the random distribution of silicon ions in the heavily doped layer adjoining the barrier.