Kenji Okada

Electrical stress-induced variable range hopping conduction in ultrathin silicon dioxides

Kenji Okada, Kenji Taniguchi · Applied Physics Letters · 1997 · 125 citations

Engineering, Silicon On Insulator, Charge Transport +16

New Experimental Findings on Stress Induced Leakage Current of Ultra Thin Silicon Dioxides

Kenji Okada, Satoko KAWASAKI, Yuichi Hirofuji · 1994 · 42 citations

Electrical Engineering, Engineering, Stress-induced Leakage Current +5

Extended Time Dependent Dielectric Breakdown Model Based on Anomalous Gate Area Dependence of Lifetime in Ultra Thin Silicon Dioxides

Kenji Okada · Japanese Journal of Applied Physics · 1997 · 38 citations

Device Modeling, Electrical Engineering, Semiconductor Device +13

Dielectric Breakdown in High-K Gate Dielectrics - Mechanism and Lifetime Assessment

Kenji Okada, Hiroyuki Ota, Toshihide Nabatame et al. · 2007 · 34 citations

Electrical Engineering, Engineering, Stress-induced Leakage Current +13

A new prediction method for oxide lifetime and its application to study dielectric breakdown mechanism

Kenji Okada, Hiroko Kubo, A. Ishinaga et al. · 2002 · 31 citations

B-mode Silc, Engineering, Life Prediction +18