High resolution Fowler-Nordheim field emission maps of thin silicon oxide layers

Abstract

An improved method for characterizing thin oxide films using Fowler-Nordheim field emission is reported. The method uses a conducting-tip atomic force microscope with dual feedback systems, one for the topography and a second for the field emission bias voltage. Images of the voltage required to maintain a 10 pA emission current through a 3 nm oxide film thermally grown on p-type Si(100) demonstrate a spatial resolution of 8 nm.