Concepedia

Large current SiC power devices for automobile applications

Takashi Nakamura, Masashi Sasagawa, Yoshiaki Nakano, T. Otsuka, Mineo Miura

2010 · 25 citations · 6 references

Abstract

The high current SiC MOSFETs and high-temperature operation IPM with SiC MOSFETs were fabricated. 300A switching in inductive load circuits was performed using a single chip SiC trench MOSFET. And 250°C (the junction temperature of SiC DMOSFETs) operation of SiC IPMs with a new high-temperature bonding method and high-temperature materials (case, encapsulation) was successfully performed.

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