Junction Resistance

Junction Resistance is the electrical resistance exhibited by the depletion region of a p-n junction under bias, distinguished from bulk semiconductor resistance by its dependence on the width of the space-charge region and the associated potential barrier for charge carriers.

1.2K

Publications

57.8K

Citations

4.7K

Authors

961

Institutions

Publications per year

2017–2026

184

Authors

4.7K

  1. ŞA
    Ş. Altındal

    Gazi University, Türkiye

    14 publications · 486 citations

    13

    h-index

  2. PP
    P. P. Freitas

    Instituto de Engenharia de Sistemas e Computadores Microsistemas e Nanotecnologias, Portugal

    12 publications · 719 citations

    12

    h-index

  3. BZ
    Bo Zhang

    University of Electronic Science and Technology of China, China

    9 publications · 318 citations

    9

    h-index

  4. XL
    Xiaorong Luo

    National Engineering Research Center of Electromagnetic Radiation Control Materials, China

    8 publications · 207 citations

    8

    h-index

  5. JJ
    J. J. Sun

    Everspin Technologies (United States), United States

    7 publications · 460 citations

    7

    h-index

1–5 of 4.7K

Venues

  1. Applied Physics Letters

    141 publications · 6.9K citations

    46

    h-index

  2. Journal of Applied Physics

    107 publications · 4.7K citations

    34

    h-index

  3. IEEE Electron Device Letters

    60 publications · 2.4K citations

    28

    h-index

  4. IEEE Transactions on Electron Devices

    79 publications · 2.5K citations

    27

    h-index

  5. Physical review. B, Condensed matter

    PRB · 30 publications · 2.2K citations

    23

    h-index

1–5