Jagadeesh S. Moodera

Author

Massachusetts Institute of Technology ORCID

Also Known As

Brink, Jeroen van den, Giazotto, F., H. Zenk, Han, Wei, J S Moodera, J. Moodera, J. S. Moodera, J.S Moodera, J.S. Moodera, JAGADEESH S. MOODERA

409

Publications

20.3K

Citations

H-Index

Concepts

All Affiliations

Massachusetts Institute of Technology University of California, Riverside Plasma Technology (United States)Northeastern University Pennsylvania State University

About

Jagadeesh S. Moodera is an author at Massachusetts Institute of Technology specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	46	87	16.3K
2	Applied Physics	46	85	16.2K
3	Natural Sciences	37	52	11.8K
4	Chemistry	6	6	626
5	Chemical Engineering	1	1	28

Jagadeesh S. Moodera

124

Publications

18.8K

Citations

H-Index

Page 1

	Year	Citations
Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions Jagadeesh S. Moodera, Lisa R. Kinder, Terrilyn M. Wong, Physical Review Letters Magnetic PropertiesEngineeringMagnetic ResonanceSpintronic MaterialMagnetic Materials	1995	3.6K
Measuring the Spin Polarization of a Metal with a Superconducting Point Contact R. J. Soulen, J. M. Byers, M. S. Osofsky, Science Materials ScienceSpintronicsMagnetismSuperconducting MaterialEngineering	1998	1.7K
Extra storage capacity in transition metal oxide lithium-ion batteries revealed by in situ magnetometry Qiang Li, Hongsen Li, Qingtao Xia, Nature Materials Materials ScienceMagnetismEngineeringLithium-ion BatteryApplied Physics	2020	638
Half Metallic Magnets Warren E. Pickett, Jagadeesh S. Moodera Physics Today EngineeringMagnetic MaterialsSemiconductor NanostructuresSemiconductorsMagnetism	2001	635
Spin polarized tunneling in ferromagnetic junctions Jagadeesh S. Moodera, George Mathon Journal of Magnetism and Magnetic Materials SpintronicsMagnetismEngineeringPhysicsNatural Sciences	1999	553
Interface-engineered templates for molecular spin memory devices Karthik V. Raman, A. M. Kamerbeek, Arup Mukherjee, Nature SpintronicsEngineeringApplied PhysicsMagnetic ResonanceInterface-engineered Templates	2013	463
A high-temperature ferromagnetic topological insulating phase by proximity coupling Ferhat Katmis, Valeria Lauter, Flavio S. Nogueira, Nature Topological MagnetismMagnetismSpintronicsEngineeringPhysics	2016	453
Carrier-controlled ferromagnetism in transparent oxide semiconductors John Philip, Alex Punnoose, Byung‐Il Kim, Nature Materials SemiconductorsEngineeringFerroelectric ApplicationOxide ElectronicsOxide Semiconductors	2006	421
Interface Magnetism and Spin Wave Scattering in Ferromagnet-Insulator-Ferromagnet Tunnel Junctions Jagadeesh S. Moodera, J. Nowak, René J. M. van de Veerdonk Physical Review Letters Magnetic PropertiesEngineeringLow-dimensional MagnetismTemperature DependenceMagnetic Resonance	1998	393
Room-Temperature Tunnel Magnetoresistance and Spin-Polarized Tunneling through an Organic Semiconductor Barrier Tiffany Santos, J. S. Lee, I.C. Lekshmi, Physical Review Letters EngineeringOrganic ElectronicsUltrathin LayerChemistrySpintronic Material	2007	393

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