J. J. Sun

A 4-Mb toggle MRAM based on a novel bit and switching method

B. N. Engel, Johan Åkerman, B. Butcher et al. · IEEE Transactions on Magnetics · 2005 · 470 citations

Magnetism, Electrical Engineering, Spintronics +14

Large tunneling magnetoresistance enhancement by thermal anneal

R. C. Sousa, J. J. Sun, V. Soares et al. · Applied Physics Letters · 1998 · 188 citations

Magnetic Properties, Magnetoresistance Enhancement, Engineering +18

A Fully Functional 64 Mb DDR3 ST-MRAM Built on 90 nm CMOS Technology

Nicholas D. Rizzo, D. Houssameddine, J. Janesky et al. · IEEE Transactions on Magnetics · 2013 · 135 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +26

MgO-based tunnel junction material for high-speed toggle magnetic random access memory

R. W. Dave, G. Steiner, J. M. Slaughter et al. · IEEE Transactions on Magnetics · 2006 · 86 citations

Materials Engineering, Magnetism, Electrical Engineering +15

Low resistance spin-dependent tunnel junctions deposited with a vacuum break and radio frequency plasma oxidized

J. J. Sun, V. Soares, P. P. Freitas · Applied Physics Letters · 1999 · 66 citations

Magnetic Properties, Engineering, Magnetic Resonance +23