J. J. Sun

A 4-Mb toggle MRAM based on a novel bit and switching method

B. N. Engel, Johan Åkerman, B. Butcher et al. · IEEE Transactions on Magnetics · 2005 · 479 citations

Engineering, Computer Engineering, Electrical Engineering +17

Large tunneling magnetoresistance enhancement by thermal anneal

R. C. Sousa, J. J. Sun, V. Soares et al. · Applied Physics Letters · 1998 · 188 citations

Natural Sciences, Electrical Engineering, Materials Science +13

A Fully Functional 64 Mb DDR3 ST-MRAM Built on 90 nm CMOS Technology

Nicholas D. Rizzo, D. Houssameddine, J. Janesky et al. · IEEE Transactions on Magnetics · 2013 · 139 citations

Engineering, Computer Engineering, Electrical Engineering +14

MgO-based tunnel junction material for high-speed toggle magnetic random access memory

R. W. Dave, G. Steiner, J. M. Slaughter et al. · IEEE Transactions on Magnetics · 2006 · 87 citations

Natural Sciences, Materials Engineering, Materials Science +17

Demonstration of a Reliable 1 Gb Standalone Spin-Transfer Torque MRAM For Industrial Applications

S. Aggarwal, H. Almasi, M. DeHerrera et al. · 2019 · 84 citations

Engineering, Electrical Engineering, Materials Science +14