B. N. Engel

Phase-locking in double-point-contact spin-transfer devices

F. B. Mancoff, Nicholas D. Rizzo, B. N. Engel et al. · Nature · 2005 · 501 citations

Natural Sciences, Electrical Engineering, Physics +9

A 4-Mb toggle MRAM based on a novel bit and switching method

B. N. Engel, Johan Åkerman, B. Butcher et al. · IEEE Transactions on Magnetics · 2005 · 479 citations

Engineering, Computer Engineering, Electrical Engineering +17

Magnetoresistive random access memory using magnetic tunnel junctions

S. Tehrani, J. M. Slaughter, M. DeHerrera et al. · Proceedings of the IEEE · 2003 · 401 citations

Natural Sciences, Electrical Engineering, Materials Science +15

A 1-Mbit MRAM based on 1T1MTJ bit cell integrated with copper interconnects

M. Durlam, P.J. Naji, A. Omair et al. · IEEE Journal of Solid-State Circuits · 2003 · 133 citations

Engineering, Computer Engineering, Electrical Engineering +15

Angular dependence of spin-transfer switching in a magnetic nanostructure

F. B. Mancoff, R. W. Dave, Nicholas D. Rizzo et al. · Applied Physics Letters · 2003 · 82 citations

Natural Sciences, Materials Science, Physics +17