26
Publications
2.7K
Citations
19
H-Index
1996
Active since
M. Durlam is an author at Motorola (United States) specializing in engineering, magnetism, and microelectronics.
Top concepts
EngineeringMicroelectronicsMagnetismElectrical EngineeringSpintronicsMagnetoresistive Random-access MemoryComputer EngineeringApplied PhysicsComputer ArchitectureMemory Devices
Publications per year
1996–2007
26
26
A 4-Mb toggle MRAM based on a novel bit and switching method
B. N. Engel, Johan Åkerman, B. Butcher et al. · IEEE Transactions on Magnetics · 2005 · 470 citations
Progress and outlook for MRAM technology
S. Tehrani, J. M. Slaughter, E. Chen et al. · IEEE Transactions on Magnetics · 1999 · 432 citations
Recent developments in magnetic tunnel junction MRAM
S. Tehrani, B. Engel, J. M. Slaughter et al. · IEEE Transactions on Magnetics · 2000 · 311 citations
Non-volatile Memory, Engineering, Emerging Memory Technology +17
High density submicron magnetoresistive random access memory (invited)
S. Tehrani, E. Chen, M. Durlam et al. · Journal of Applied Physics · 1999 · 188 citations
Rows per page
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