IEEE Transactions on Magnetics · 2000 · 321 citations · 16 references
Natural SciencesElectrical EngineeringMaterials ScienceElectronic MaterialsMagnetic MaterialsMicroelectronicsFerromagnetic MaterialsMagnetic Recording MaterialsMemory DevicesSpintronicsThin Film Magnetic PropertiesMagnetic Tunnel JunctionsMagnetoresistive Random-access MemoryRandom Access Memory (Ram)Random-access MemoryShape AnisotropyTunnel Junctions
Switching characteristics of MTJ‑based MRAM are mainly governed by magnetic shape anisotropy arising from element boundaries. We summarize our progress on MRAM based on magnetic tunnel junctions. The study examines MRAM devices constructed from magnetic tunnel junctions. We demonstrated MTJ material with MR values above 40 % over 1–1000 kΩ/μm², showed that switching repeatability and hard‑axis selectability depend on shape and aspect ratio, and integrated MTJ memory into 0.6 μm CMOS achieving 14 ns read/program access times in a 256‑bit MRAM.
We summarize our progress on Magnetoresistive Random Access Memory (MRAM) based on Magnetic Tunnel Junctions (MTJ). We have demonstrated MTJ material in the 1-1000 k/spl Omega/-/spl mu/m/sup 2/ range with MR values above 40%. The switching characteristics are mainly governed by the magnetic shape anisotropy that arises from the element boundaries. The switching repeatability, as well as hard axis selectability, are shown to be dependent on both shape and aspect ratio. MTJ memory elements were successfully integrated with 0.6 /spl mu/m CMOS technology, achieving read and program address access times of 14 ns in a 256/spl times/2 MRAM.
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Microstructured magnetic tunnel junctions (invited)
W. J. Gallagher, S. Parkin, Yu Lu et al. · Journal of Applied Physics · 1997 · 449 citations
Natural Sciences, Materials Engineering, Materials Science +17
Progress and outlook for MRAM technology
S. Tehrani, J. M. Slaughter, E. Chen et al. · IEEE Transactions on Magnetics · 1999 · 437 citations
Engineering, Computer Engineering, Electrical Engineering +9
Large tunneling magnetoresistance enhancement by thermal anneal
R. C. Sousa, J. J. Sun, V. Soares et al. · Applied Physics Letters · 1998 · 188 citations
Natural Sciences, Electrical Engineering, Materials Science +13