J. Calder is an author at Motorola (United States) specializing in magnetoresistive random-access memory, engineering, and magnetism.
Top concepts
MagnetismEngineeringMicroelectronicsElectrical EngineeringMagnetoresistive Random-access MemorySpintronicsComputer EngineeringMemory DevicesMemory DesignApplied Physics
Publications per year
2000–2006
6
6
Recent developments in magnetic tunnel junction MRAM
S. Tehrani, B. Engel, J. M. Slaughter et al. · IEEE Transactions on Magnetics · 2000 · 311 citations
Non-volatile Memory, Engineering, Emerging Memory Technology +17
A 1-Mbit MRAM based on 1T1MTJ bit cell integrated with copper interconnects
M. Durlam, P.J. Naji, A. Omair et al. · IEEE Journal of Solid-State Circuits · 2003 · 132 citations
A low power 1 Mbit MRAM based on 1T1MTJ bit cell integrated with copper interconnects
A 256 kb 3.0 V 1T1MTJ nonvolatile magnetoresistive RAM
P. Naji, M. Durlam, S. Tehrani et al. · 2002 · 43 citations
High speed toggle MRAM with mgO-based tunnel junctions
J. M. Slaughter, R. W. Dave, M. Durlam et al. · 2006 · 27 citations
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