A 256 kb 3.0 V 1T1MTJ nonvolatile magnetoresistive RAM

TLDR

MRAM integrates magnetic memory elements with CMOS, providing nonvolatility and unlimited read and program endurance. The 256‑kb device employs 1T‑1MTJ cells with read/write cycles under 50 ns, arranged in a 16 k × 16 array. Read power consumption is 24 mW at 3 V and 20 MHz.

Abstract

Magnetoresistive random access memory (MRAM) is based on magnetic memory elements integrated with CMOS. Key attributes of MRAM technology are nonvolatility and unlimited read and program endurance. A 256 kb nonvolatile MRAM is based on a memory cell defined by a single transistor (1T) and a single magnetic tunnel junction (MTJ) with read and write cycles <50 ns. The memory organization is 16 k×16. Measured read power consumption is 24 mW at 3 V and 20 MHz.