4
Publications
462
Citations
4
H-Index
2000
Active since
Affiliations
P. Naji is an author at Motorola (United States) specializing in electrical engineering, microelectronics, and magnetism.
Top concepts
MagnetismEngineeringSpintronicsMicroelectronicsComputer EngineeringElectrical EngineeringMagnetoresistive Random-access MemoryApplied PhysicsComputer ArchitectureResistive Random-access Memory
Publications per year
2000–2003
4
4
Recent developments in magnetic tunnel junction MRAM
S. Tehrani, B. Engel, J. M. Slaughter et al. · IEEE Transactions on Magnetics · 2000 · 311 citations
Non-volatile Memory, Engineering, Emerging Memory Technology +17
Nonvolatile RAM based on magnetic tunnel junction elements
M. Durlam, P. Naji, M. DeHerrera et al. · 2002 · 62 citations
A low power 1 Mbit MRAM based on 1T1MTJ bit cell integrated with copper interconnects
A 256 kb 3.0 V 1T1MTJ nonvolatile magnetoresistive RAM
P. Naji, M. Durlam, S. Tehrani et al. · 2002 · 43 citations
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