Publication | Closed Access
Nonvolatile RAM based on magnetic tunnel junction elements
62
Citations
6
References
2002
Year
Unknown Venue
SpintronicsMagnetismElectrical EngineeringMagnetic Memory ElementsEngineeringNon-volatile MemoryEmerging Memory TechnologyApplied PhysicsFerroelectric Random-access MemoryComputer EngineeringMagnetoresistive Random-access MemoryMemory DeviceSemiconductor MemoryMram TechnologyResistive Random-access MemoryMicroelectronicsHigh SpeedNonvolatile Ram
Magnetoresistive random access memory (MRAM), is based on magnetic memory elements integrated with CMOS. Key attributes of MRAM technology are nonvolatility and unlimited read and write endurance. Recent advances in magnetic tunnel junction (MTJ) materials give MRAM the potential for high speed, low operating voltage, and high density.
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