High Bandwidth Memory

High Bandwidth Memory is a stacked DRAM architecture that provides significantly increased memory bandwidth and reduced latency compared to traditional memory designs through vertical integration and wide interconnect interfaces.

337

Publications

14.8K

Citations

1.7K

Authors

263

Institutions

Publications per year

2017–2026

188

Variants

Hbm

Authors

1.7K

  1. JK
    Joungho Kim

    Korea Advanced Institute of Science and Technology, South Korea

    14 publications · 406 citations

    15

    h-index

  2. KC
    Kyungjun Cho

    Korea Advanced Institute of Science and Technology, South Korea

    12 publications · 419 citations

    12

    h-index

  3. SK
    Subin Kim

    Korea Advanced Institute of Science and Technology, South Korea

    9 publications · 306 citations

    9

    h-index

  4. KS
    Kyomin Sohn

    Samsung (South Korea), South Korea

    7 publications · 511 citations

    9

    h-index

  5. HK
    Heegon Kim

    Korea Advanced Institute of Science and Technology, South Korea

    8 publications · 213 citations

    8

    h-index

1–5 of 1.7K

Venues

  1. IEEE Journal of Solid-State Circuits

    21 publications · 1K citations

    17

    h-index

  2. arXiv (Cornell University)

    Repository · 9 publications · 648 citations

    10

    h-index

  3. IEEE Micro

    7 publications · 1.7K citations

    7

    h-index

  4. 6

    h-index

  5. Physical Review Letters

    PRL · 5 publications · 276 citations

    5

    h-index

1–5