J. Janesky

A 4-Mb toggle MRAM based on a novel bit and switching method

B. N. Engel, Johan Åkerman, B. Butcher et al. · IEEE Transactions on Magnetics · 2005 · 470 citations

Magnetism, Electrical Engineering, Spintronics +14

Magnetoresistive random access memory using magnetic tunnel junctions

S. Tehrani, J. M. Slaughter, M. DeHerrera et al. · Proceedings of the IEEE · 2003 · 397 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +18

Recent developments in magnetic tunnel junction MRAM

S. Tehrani, B. Engel, J. M. Slaughter et al. · IEEE Transactions on Magnetics · 2000 · 311 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +17

Magnetoresistive Random Access Memory: Present and Future

S. Ikegawa, F. B. Mancoff, J. Janesky et al. · IEEE Transactions on Electron Devices · 2020 · 224 citations

Magnetism, Electrical Engineering, Spintronics +14

A Fully Functional 64 Mb DDR3 ST-MRAM Built on 90 nm CMOS Technology

Nicholas D. Rizzo, D. Houssameddine, J. Janesky et al. · IEEE Transactions on Magnetics · 2013 · 135 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +26