IEEE Transactions on Magnetics · 2005 · 479 citations · 3 references
EngineeringComputer EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesAntiferromagnetismCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyMagnetic OxidesMemory DevicesSpintronicsAntiferromagnetic CouplingAntiferromagnetic SemiconductorsComplementary Metal-oxide-semiconductor DevicesMagnetoresistive Random-access MemoryPulse Sequence DesignRandom Access Memory (Ram)Random-access MemoryResistive Random-access Memory
A 4‑Mb MRAM with a novel magnetic bit cell and toggle switching mode is presented. The device was fabricated in a five‑level, 0.18‑µm CMOS process with a 1.55‑µm² bit cell that employs a balanced synthetic antiferromagnetic free layer and a phased write‑pulse sequence to achieve robust toggle switching. This switching mode greatly improves the operational performance of the MRAM compared to conventional MRAM.
A 4-Mb magnetoresistive random access memory (MRAM) with a novel magnetic bit cell and toggle switching mode is presented. The circuit was designed in a five level metal, 0.18-/spl mu/m complementary metal-oxide-semiconductor process with a bit cell size of 1.55 /spl mu/m/sup 2/. The new bit cell uses a balanced synthetic antiferromagnetic free layer and a phased write pulse sequence to provide robust switching performance with immunity from half-select disturbs. This switching mode greatly improves the operational performance of the MRAM as compared to conventional MRAM. A detailed description of this 4-Mb toggle MRAM is presented.
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A low power 1 Mbit MRAM based on 1T1MTJ bit cell integrated with copper interconnects
M. Durlam, P. Naji, A. Omair et al. · 2003 · 46 citations
Engineering, Computer Engineering, Electrical Engineering +16