Srinivas V. Pietambaram

A 4-Mb toggle MRAM based on a novel bit and switching method

B. N. Engel, Johan Åkerman, B. Butcher et al. · IEEE Transactions on Magnetics · 2005 · 470 citations

Magnetism, Electrical Engineering, Spintronics +14

MgO-based tunnel junction material for high-speed toggle magnetic random access memory

R. W. Dave, G. Steiner, J. M. Slaughter et al. · IEEE Transactions on Magnetics · 2006 · 86 citations

Materials Engineering, Magnetism, Electrical Engineering +15

Interface characterization of high-quality SrTiO3 thin films on Si(100) substrates grown by molecular beam epitaxy

J. Ramdani, Ravi Droopad, Zhiyi Yu et al. · Applied Surface Science · 2000 · 36 citations

Materials Science, Engineering, Silicon On Insulator +6

Exchange Coupling Control and Thermal Endurance of Synthetic Antiferromagnet Structures for MRAM

Srinivas V. Pietambaram, J. Janesky, R. W. Dave et al. · IEEE Transactions on Magnetics · 2004 · 31 citations

Thermal Endurance, Engineering, Magnetic Resonance +24

Low-power switching in magnetoresistive random access memory bits using enhanced permeability dielectric films

Srinivas V. Pietambaram, N.D. Rizzo, R. W. Dave et al. · Applied Physics Letters · 2007 · 24 citations

Non-volatile Memory, Magnetic Properties, Engineering +23