N.D. Rizzo

A 4-Mb toggle MRAM based on a novel bit and switching method

B. N. Engel, Johan Åkerman, B. Butcher et al. · IEEE Transactions on Magnetics · 2005 · 479 citations

Engineering, Computer Engineering, Electrical Engineering +17

Magnetoresistive random access memory using magnetic tunnel junctions

S. Tehrani, J. M. Slaughter, M. DeHerrera et al. · Proceedings of the IEEE · 2003 · 401 citations

Natural Sciences, Electrical Engineering, Materials Science +15

A 1-Mbit MRAM based on 1T1MTJ bit cell integrated with copper interconnects

M. Durlam, P.J. Naji, A. Omair et al. · IEEE Journal of Solid-State Circuits · 2003 · 133 citations

Engineering, Computer Engineering, Electrical Engineering +15

Thermally activated magnetization reversal in submicron magnetic tunnel junctions for magnetoresistive random access memory

N.D. Rizzo, M. DeHerrera, J. Janesky et al. · Applied Physics Letters · 2002 · 101 citations

Natural Sciences, Materials Science, Physics +17

The science and technology of magnetoresistive tunneling memory

B. N. Engel, N.D. Rizzo, J. Janesky et al. · IEEE Transactions on Nanotechnology · 2002 · 69 citations

Engineering, Computer Engineering, Electrical Engineering +14