G. Grynkewich

A 4-Mb toggle MRAM based on a novel bit and switching method

B. N. Engel, Johan Åkerman, B. Butcher et al. · IEEE Transactions on Magnetics · 2005 · 470 citations

Magnetism, Electrical Engineering, Spintronics +14

Magnetoresistive random access memory using magnetic tunnel junctions

S. Tehrani, J. M. Slaughter, M. DeHerrera et al. · Proceedings of the IEEE · 2003 · 397 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +18

A 1-Mbit MRAM based on 1T1MTJ bit cell integrated with copper interconnects

M. Durlam, P.J. Naji, A. Omair et al. · IEEE Journal of Solid-State Circuits · 2003 · 132 citations

Non-volatile Memory, Engineering, Memory Design +18

Rational synthesis of unidimensional mixed valence solids. Structural, spectral, and electrical studies of charge distribution and transport in partially oxidized nickel and palladium bisdiphenylglyoximates

Martín Cowie, Alain Gleizes, G. Grynkewich et al. · Journal of the American Chemical Society · 1979 · 121 citations

Materials Science, Inorganic Chemistry, Rational Synthesis +12

MgO-based tunnel junction material for high-speed toggle magnetic random access memory

R. W. Dave, G. Steiner, J. M. Slaughter et al. · IEEE Transactions on Magnetics · 2006 · 86 citations

Materials Engineering, Magnetism, Electrical Engineering +15