Recent developments in magnetic tunnel junction MRAM

S. Tehrani, B. Engel, J. M. Slaughter, +7

IEEE Transactions on Magnetics

Non-volatile MemoryEngineeringEmerging Memory TechnologyMagnetic ResonanceMagnetic Shape Anisotropy +15

A Fully Functional 64 Mb DDR3 ST-MRAM Built on 90 nm CMOS Technology

Nicholas D. Rizzo, D. Houssameddine, J. Janesky, +12

IEEE Transactions on Magnetics

Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureMagnetic Materials +24

Comparison of oxidation methods for magnetic tunnel junction material

E. Y. Chen, R. Whig, J. M. Slaughter, +4

Journal of Applied Physics

Magnetic PropertiesEngineeringMtj Resistance UniformityAl Metal-thickness UniformityMagnetic Materials +15

CMOS-embedded STT-MRAM arrays in 2x nm nodes for GP-MCU applications

D. Shum, D. Houssameddine, S. T. Woo, +35

Non-volatile MemoryEngineeringEmerging Memory TechnologyMagnetic ResonanceComputer Architecture +16

Technology for reliable spin-torque MRAM products

J. M. Slaughter, K. Nagel, R. Whig, +24

MagnetismSpintronicsElectrical EngineeringEngineeringSpin-orbit Torque +12

High density ST-MRAM technology (Invited)

J. M. Slaughter, Nicholas D. Rizzo, J. Janesky, +10

Materials EngineeringNon-volatile MemoryElectrical EngineeringMemory ArchitectureEngineering +11

Heat-driven spin transport in a ferromagnetic metal

Yadong Xu, Bowen Yang, Chi Tang, +4

Applied Physics Letters

EngineeringMagnetic ResonanceSpin DynamicMagnetic MaterialsSpin Phenomenon +15

Process Optimization of Perpendicular Magnetic Tunnel Junction Arrays for Last-Level Cache beyond 7 nm Node

Xue Lin, Chi Ching, Alex Kontos, +11

Magnetic PropertiesEngineeringSystematic Process OptimizationMagnetic MaterialsMagnetoresistance +15

Device performance in a fully functional 800MHz DDR3 spin torque magnetic random access memory

J. Janesky, Nicholas D. Rizzo, D. Houssameddine, +15

Non-volatile MemoryEngineeringEmerging Memory TechnologyMagnetic ResonanceComputer Architecture +23