Shoichi Onda

Ultrahigh-quality silicon carbide single crystals

Daisuke Nakamura, Itaru Gunjishima, S. Yamaguchi et al. · Nature · 2004 · 416 citations

Materials Engineering, Materials Science, Engineering +4

SiC Integrated MOSFETs

Shoichi Onda, Rajesh Kumar, K. Hara · physica status solidi (a) · 1997 · 79 citations

Semiconductor Technology, Electrical Engineering, Trench Mosfet +13

Transmission electron microscope study of a threading dislocation with and its effect on leakage in a 4H–SiC MOSFET

Shoichi Onda, H. Watanabe, Yasuo Kito et al. · Philosophical Magazine Letters · 2013 · 41 citations

High Channel Mobility of MOSFET Fabricated on 4H-SiC (11-20) Face Using Wet Annealing

Takeshi Endo, Eiichi Okuno, Toshio Sakakibara et al. · Materials science forum · 2008 · 26 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

Influence of Threading Dislocations on Lifetime of Gate Thermal Oxide

Kensaku Yamamoto, Masanori Nagaya, H. Watanabe et al. · Materials science forum · 2012 · 25 citations

Engineering, Gate Thermal Oxide, Defect Tolerance +17