Ultrahigh-quality silicon carbide single crystals

Daisuke Nakamura, Itaru Gunjishima, S. Yamaguchi, +5

Nature

Materials EngineeringMaterials ScienceEngineeringCrystal MaterialCrystal Growth Technology +2

SiC Integrated MOSFETs

Shoichi Onda, Rajesh Kumar, K. Hara

physica status solidi (a)

Semiconductor TechnologyElectrical EngineeringTrench MosfetEngineeringNew Design +11

Transmission electron microscope study of a threading dislocation with and its effect on leakage in a 4H–SiC MOSFET

Shoichi Onda, H. Watanabe, Yasuo Kito, +6

Philosophical Magazine Letters

High Channel Mobility of MOSFET Fabricated on 4H-SiC (11-20) Face Using Wet Annealing

Takeshi Endo, Eiichi Okuno, Toshio Sakakibara, +1

Materials science forum

SemiconductorsSemiconductor TechnologyElectrical EngineeringMosfet FabricatedEngineering +13

Influence of Threading Dislocations on Lifetime of Gate Thermal Oxide

Kensaku Yamamoto, Masanori Nagaya, H. Watanabe, +3

Materials science forum

EngineeringGate Thermal OxideDefect ToleranceBasal Plane DislocationsRaf Wafers +15

Correlation of Stress in Silicon Carbide Crystal and Frequency Shift in Micro-Raman Spectroscopy

Naohiro Sugiyama, M. Yamada, Yasushi Urakami, +5

MRS Proceedings

Materials ScienceSpectroscopic MethodSilicon Carbide CrystalMicro-raman SpectroscopyEngineering +6

Detection of edge component of threading dislocations in GaN by Raman spectroscopy

Nobuhiko Kokubo, Yosuke Tsunooka, Fumihiro Fujie, +8

Applied Physics Express

Materials ScienceWide-bandgap SemiconductorEngineeringDislocation InteractionCrystalline Defects +12

Nondestructive visualization of threading dislocations in GaN by micro raman mapping

Nobuhiko Kokubo, Yosuke Tsunooka, Fumihiro Fujie, +7

Japanese Journal of Applied Physics

Wide-bandgap SemiconductorEngineeringMicroscopyMicro Raman MappingNondestructive Visualization +16

SiC HTCVD Simulation Modified by Sublimation Etching

Yasuo Kito, Emi Makino, Kei Ikeda, +2

Materials science forum

Materials EngineeringVertical Cylindrical ReactorElectrical EngineeringEngineeringQuasi-equilibrium State +12

Inclination of a threading dislocation in an epilayer of 4H-SiC

Hiroyasu Saka, H. Watanabe, Yasuo Kitou, +3

Japanese Journal of Applied Physics

Materials ScienceEngineeringElastic Strain EnergyPhysicsMechanical Behavior +13