Ultrahigh-quality silicon carbide single crystals

Comparison of 6H-SiC, 3C-SiC, and Si for power devices

M. Bhatnagar, B. Jayant Baliga · IEEE Transactions on Electron Devices · 1993 · 1.1K citations

Engineering, Electrical Engineering, Materials Science +17

Capillary equilibria of dislocated crystals

F. C. Frank · Acta Crystallographica · 1951 · 622 citations

Natural Sciences, Physics, Condensed Matter Physics +9

Step-controlled epitaxial growth of SiC: High quality homoepitaxy

Hiroyuki Matsunami, Tsunenobu Kimoto · Materials Science and Engineering R Reports · 1997 · 609 citations

Engineering, Materials Engineering, Materials Science +14

Investigation of growth processes of ingots of silicon carbide single crystals

Yu. M. Tairov, V. F. Tsvetkov · Journal of Crystal Growth · 1978 · 570 citations

Natural Sciences, Materials Engineering, Materials Science +14

Growth of Silicon Crystals Free from Dislocations

W. C. Dash · Journal of Applied Physics · 1959 · 376 citations

Natural Sciences, Materials Engineering, Materials Science +17