2006 · 15 citations · 3 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsDevice CharacterizationDevice ModelingDevice SimulationSemiconductor HeterostructuresSemiconductor PhysicsBipolar Junction Transistor ModelingBipolar Junction Transistor SimulationCompact Model Parameter ExtractionCompressionConvergenceElectrothermal SimulationHeterojunction Bipolar TransistorsSemiconductor Device Modeling
A new model for GaInP/GaAs power heterojunction bipolar transistors (HBT) is proposed. This non-linear electrothermal and fully scalable model was designed with closed-form equations in order to reduce simulation times in complex circuits like high power amplifiers (HPA) and to have good convergence capabilities at high compression levels. This paper presents model topology and shows parameters extraction from pulsed I-V, pulsed [S]-parameters measurements. Simulations performed on a two-stage HPA with 20 HBTs devices have demonstrated the good convergence properties as well as a good correlation with measurements
3
C. Arnaud, D. Basataud, Jean-Michel Nébus et al. · IEEE Transactions on Microwave Theory and Techniques · 2000 · 36 citations
S. Heckmann, Raphaël Sommet, Jean-Michel Nébus et al. · IEEE Transactions on Microwave Theory and Techniques · 2002 · 17 citations