S. Heckmann

Three stage 6–18 GHz high gain and high power amplifier based on GaN technology

Z. Ouarch, G. Mouginot, B. Lefebvre et al. · 2010 IEEE MTT-S International Microwave Symposium · 2010 · 21 citations

Engineering, Electrical Engineering, Microelectronics +16

Three stage 6–18 GHz high gain and high power amplifier based on GaN technology

G. Mouginot, Z. Ouarch, B. Lefebvre et al. · 2010 IEEE MTT-S International Microwave Symposium · 2010 · 18 citations

Engineering, Electrical Engineering, Microelectronics +16

Characterization and modeling of bias dependent breakdown and self-heating in GaInP/GaAs power HBT to improve high power amplifier design

S. Heckmann, Raphaël Sommet, Jean-Michel Nébus et al. · IEEE Transactions on Microwave Theory and Techniques · 2002 · 17 citations

Engineering, Electrical Engineering, Microelectronics +16

An Electrothermal Model for GaInP/GaAs Power HBTs with Enhanced Convergence Capabilities

Olivier Jardel, Raymond Quéré, S. Heckmann et al. · 2006 · 15 citations

Engineering, Electrical Engineering, Microelectronics +16

Industrial GaN FET technology

H. Blanck, J. Thorpe, R. Behtash et al. · International Journal of Microwave and Wireless Technologies · 2010 · 15 citations

Engineering, Electrical Engineering, Materials Science +11