G. Mouginot

Thermal modeling and measurements of AlGaN/GaN HEMTs including thermal boundary resistance

Raphaël Sommet, G. Mouginot, R. Quere et al. · Microelectronics Journal · 2011 · 30 citations

Industrial 0.15-μm AlGaN/GaN on SiC Technology for Applications up to Ka Band

Valeria Di Giacomo-Brunel, Estelle Byk, Christophe Chang et al. · 2018 · 29 citations

Wide-bandgap Semiconductor, Electrical Engineering, Main Characteristics +13

Three stage 6–18 GHz high gain and high power amplifier based on GaN technology

Z. Ouarch, G. Mouginot, B. Lefebvre et al. · 2010 IEEE MTT-S International Microwave Symposium · 2010 · 21 citations

Wide-bandgap Semiconductor, Stage 6, Electrical Engineering +10

Highly integrated S and C-band internally-matched Quasi-MMIC power GaN devices

M. Camiade, Diane Bouw, G. Mouginot et al. · 2012 · 17 citations

Three stage 6–18 GHz high gain and high power amplifier based on GaN technology

G. Mouginot, Z. Ouarch, B. Lefebvre et al. · 2010 IEEE MTT-S International Microwave Symposium · 2010 · 17 citations

Wide-bandgap Semiconductor, Stage 6, Electrical Engineering +9