2018 · 29 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesMicrowave Semiconductor DevicesSemiconductor HeterostructuresWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Microwave Integrated CircuitsGallium Nitride Power DevicesGan-based High-frequency DevicesQualificationSilicon CarbideSilicon Carbide (Sic) Materials
This paper describes the main characteristics of the new GaN-on-SiC technology in development at UMS. This technology is based on a 0.15-μm gate-length and it is in the phase of industrial qualification for a target release by the end of the year. The results of two out of four demonstrators already successfully designed on the new technology are also reported: a 29.5-36 Ghz 9W HPA and a 15.5-18.5 GHz 20W HPA.
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High-power K-band GaN PA MMICs and module for NPR and PAE
Salah Din, Andy M. Morishita, Neal Yamamoto et al. · 2017 · 43 citations
A 20-Watt Ka-band GaN high power amplifier MMIC