H. Jung

Recombination Enhancement due to Carrier Localization in Quantum Well Structures

E. O. Göbel, H. Jung, J. Kühl et al. · Physical Review Letters · 1983 · 236 citations

Engineering, Quantum Well, Optoelectronic Devices +16

Temperature dependence of photoluminescence from GaAs single and multiple quantum-well heterostructures grown by molecular-beam epitaxy

Dayong Jiang, H. Jung, K. Ploog · Journal of Applied Physics · 1988 · 223 citations

Wide-bandgap Semiconductor, Photonics, Photoluminescence +14

Photoluminescence study of electron-hole recombination across the tunable effective gap in GaAs n-i-p-i superlattices

H. Jung, G. H. Döhler, H. Künzel et al. · Solid State Communications · 1982 · 51 citations

Photoluminescence, Engineering, Tunable Effective Gap +6

The effect of arsenic vapour species on electrical and optical properties of GaAs grown by molecular beam epitaxy

H. K�nzel, J. Knecht, H. Jung et al. · Applied Physics A · 1982 · 41 citations

Electrical Engineering, Optical Materials, Engineering +8

Photoluminescence of AlxGa1?xAs/GaAs quantum well heterostructures grown by molecular beam epitaxy

H. Jung, A. Fischer, K. Ploog · Applied Physics A · 1984 · 36 citations

Aluminium Nitride, Photonics, Photoluminescence +6