The effect of arsenic vapour species on electrical and optical properties of GaAs grown by molecular beam epitaxy

Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam technique

C. T. Foxon, B.A. Joyce · Surface Science · 1975 · 396 citations

Natural Sciences, Materials Engineering, Materials Science +14

Interaction kinetics of As2 and Ga on {100} GaAs surfaces

C. T. Foxon, B.A. Joyce · Surface Science · 1977 · 358 citations

Natural Sciences, Materials Engineering, Materials Science +14

The evaporation of GaAs under equilibrium and non-equilibrium conditions using a modulated beam technique

C. T. Foxon, John A. Harvey, B.A. Joyce · Journal of Physics and Chemistry of Solids · 1973 · 266 citations

Natural Sciences, Materials Science, Physics +9

The effect of As2 and As4 molecular beam species on photoluminescence of molecular beam epitaxially grown GaAs

H. Künzel, K. Ploog · Applied Physics Letters · 1980 · 225 citations

Engineering, Materials Engineering, Materials Science +16

Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and P

M. B. Panish · Journal of The Electrochemical Society · 1980 · 223 citations

Engineering, Materials Engineering, Materials Science +11