Christophe Chang

A 24–28-GHz Doherty Power Amplifier With 4-W Output Power and 32% PAE at 6-dB OPBO in 150-nm GaN Technology

Mingquan Bao, David Gustafsson, Rui Hou et al. · IEEE Microwave and Wireless Components Letters · 2021 · 56 citations

Electrical Engineering, 6-Db Opbo, Engineering +7

GH25-10: New qualified power GaN HEMT process from technology to product overview

D. Floriot, V. Brunel, M. Camiade et al. · 2014 · 32 citations

Industrial 0.15-μm AlGaN/GaN on SiC Technology for Applications up to Ka Band

Valeria Di Giacomo-Brunel, Estelle Byk, Christophe Chang et al. · 2018 · 29 citations

Wide-bandgap Semiconductor, Electrical Engineering, Main Characteristics +13

Dynamic Performance and Characterization of Traps Using Different Measurements Techniques for the New AlGaN/GaN HEMT of 0.15-$\mu$ m Ultrashort Gate Length

Mohamed Bouslama, V. Gillet, Christophe Chang et al. · IEEE Transactions on Microwave Theory and Techniques · 2019 · 29 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

10W Ka Band MMIC Power Amplifiers based on InAlGaN/GaN HEMT Technology

C. Potier, J-C Jacquet, C. Lacam et al. · 2019 · 18 citations

Wide-bandgap Semiconductor, Mmic Power Amplifiers, Electrical Engineering +9