C. Potier

ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT

R. Aubry, J. Jacquet, M. Oualli et al. · IEEE Electron Device Letters · 2016 · 59 citations

Engineering, Electrical Engineering, Materials Science +17

Trap characterization of microwave GaN HEMTs based on frequency dispersion of the output-admittance

C. Potier, Anthony Martin, Michel Campovecchio et al. · 2014 · 22 citations

Engineering, Electrical Engineering, Electronic Materials +16

Highlighting trapping phenomena in microwave GaN HEMTs by low-frequency<i>S</i>-parameters

C. Potier, Jean-Claude Jacquet, C. Dua et al. · International Journal of Microwave and Wireless Technologies · 2015 · 20 citations

Engineering, Electrical Engineering, Materials Science +17

10W Ka Band MMIC Power Amplifiers based on InAlGaN/GaN HEMT Technology

C. Potier, J-C Jacquet, C. Lacam et al. · 2019 · 20 citations

Engineering, Electrical Engineering, Microelectronics +16

InAlGaN/GaN with AlGaN back-barrier HEMT technology on SiC for Ka-band applications

S. Piotrowicz, Jean-Claude Jacquet, Piero Gamarra et al. · International Journal of Microwave and Wireless Technologies · 2017 · 18 citations

Engineering, Electrical Engineering, Materials Science +17