Mohamed Bouslama

Deep-Level Traps in AlGaN/GaN- and AlInN/GaN-Based HEMTs With Different Buffer Doping Technologies

P. Vigneshwara Raja, Mohamed Bouslama, Sujan Sarkar et al. · IEEE Transactions on Electron Devices · 2020 · 69 citations

Engineering, Electrical Engineering, Materials Science +17

Dynamic Performance and Characterization of Traps Using Different Measurements Techniques for the New AlGaN/GaN HEMT of 0.15-$\mu$ m Ultrashort Gate Length

Mohamed Bouslama, V. Gillet, Christophe Chang et al. · IEEE Transactions on Microwave Theory and Techniques · 2019 · 31 citations

Engineering, Electrical Engineering, Instrumentation +16

Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties

P. Vigneshwara Raja, Nandha Kumar Subramani, F. Gaillard et al. · Electronics · 2021 · 30 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Estimation of Trapping Induced Dynamic Reduction in 2DEG Density of GaN-Based HEMTs by Gate-Lag DCT Technique

P. Vigneshwara Raja, Emmanuel Dupouy, Mohamed Bouslama et al. · IEEE Transactions on Electron Devices · 2022 · 17 citations · Full text

Engineering, Electrical Engineering, Materials Engineering +14

Investigation of electron trapping in AlGaN/GaN HEMT with Fe-doped buffer through DCT characterization and TCAD device simulations

Mohamed Bouslama, P. Vigneshwara Raja, F. Gaillard et al. · AIP Advances · 2021 · 15 citations · Full text

Engineering, Electrical Engineering, Materials Science +17