R. Quere

40-GHz/150-ns versatile pulsed measurement system for microwave transistor isothermal characterization

Jean-Pierre Teyssier, Philippe Bouysse, Z. Ouarch et al. · IEEE Transactions on Microwave Theory and Techniques · 1998 · 88 citations

Trapping Effects, Electrical Engineering, Pulse Setup +15

A Drain-Lag Model for AlGaN/GaN Power HEMTs

Olivier Jardel, Fabien de Groote, C. Charbonniaud et al. · IEEE MTT-S International Microwave Symposium digest · 2007 · 51 citations

Device Modeling, Electrical Engineering, Engineering +11

Thermal modeling and measurements of AlGaN/GaN HEMTs including thermal boundary resistance

Raphaël Sommet, G. Mouginot, R. Quere et al. · Microelectronics Journal · 2011 · 30 citations

Thermal analysis of AlN/GaN/AlGaN HEMTs grown on Si and SiC substrate through TCAD simulations and measurements

A. K. Sahoo, Nandha Kumar Subramani, J-C. Nallatamby et al. · 2016 · 20 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +19

A CAD-oriented nonlinear model of SiC MESFET based on pulsed I(V), pulsed S-parameter measurements

D. Siriex, O. Noblanc, D. Barataud et al. · IEEE Transactions on Electron Devices · 1999 · 19 citations

Device Modeling, Electrical Engineering, Sic Devices +14