Jean-Pierre Teyssier

Author

Also Known As

J. P. Teyssier, J. Teyssier, J.-P. Teyssier, J.P Teyssier, J.P. Teyssier, JP Teyssier, Jean-Pierre Teyssier, Teyssier, J.P., Teyssier, Jean-Baptiste, Teyssier, Jean-Pierre

116

Publications

1.2K

Citations

H-Index

Concepts

All Affiliations

Université de Limoges Centre National de la Recherche Scientifique XLIM Thales (France)Keysight Technologies (United States)

About

Jean-Pierre Teyssier is an author at Université de Limoges specializing in electrical engineering, engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	31	1K
2	Electrical Engineering	18	28	940
3	Applied Physics	12	13	639
4	Education	7	7	205
5	Computer Engineering	5	5	81

Jean-Pierre Teyssier

Publications

1.1K

Citations

H-Index

Page 1

	Year	Citations
An Electrothermal Model for AlGaN/GaN Power HEMTs Including Trapping Effects to Improve Large-Signal Simulation Results on High VSWR Olivier Jardel, Fabien de Groote, Tibault Reveyrand, IEEE Transactions on Microwave Theory and Techniques Wide-bandgap SemiconductorLarge-signal Electrothermal ModelElectrical EngineeringEngineeringHigh Vswr	2007	289
40-GHz/150-ns versatile pulsed measurement system for microwave transistor isothermal characterization Jean-Pierre Teyssier, Philippe Bouysse, Z. Ouarch, IEEE Transactions on Microwave Theory and Techniques Trapping EffectsElectrical EngineeringPulse SetupEngineeringRadio Frequency	1998	88
A Drain-Lag Model for AlGaN/GaN Power HEMTs Olivier Jardel, Fabien de Groote, C. Charbonniaud, IEEE MTT-S International Microwave Symposium digest Device ModelingElectrical EngineeringEngineeringDrain-lag EffectsNanoelectronics	2007	51
Characterizing Amplifier Modulation Distortion Using a Vector Network Analyzer Jan Verspecht, Augustine Stav, Jean-Pierre Teyssier, Input SignalAmplifier Modulation DistortionEngineeringInput SignalsNonlinear Circuit	2019	44
An active pulsed RF and pulsed DC load-pull system for the characterization of HBT power amplifiers used in coherent radar and communication systems C. Arnaud, D. Basataud, Jean-Michel Nébus, IEEE Transactions on Microwave Theory and Techniques Active Pulsed RfElectrical EngineeringLoad-pull MeasurementsEngineeringRf Semiconductor	2000	36
A new nonlinear HEMT model for AlGaN/GaN switch applications Guillaume Callet, Jad Faraj, Olivier Jardel, International Journal of Microwave and Wireless Technologies Device ModelingElectrical EngineeringEngineeringSame Transistor TopologyApplied Physics	2010	35
Fully integrated nonlinear modeling and characterization system of microwave transistors with on-wafer pulsed measurements Jean-Pierre Teyssier, J.P. Viaud, J.J. Raoux, Device ModelingElectrical EngineeringEngineeringMicrowave Device ModelingNonlinear Circuit	2002	34
A new nonlinear I(V) model for FET devices including breakdown effects Jean-Pierre Teyssier, J.P. Viaud, Raymond Quéré IEEE Microwave and Guided Wave Letters EngineeringPower ElectronicsHigh Voltage EngineeringNanoelectronicsNonlinear Model	1994	33
Introduction to measurements for power transistor characterization Fabien de Groote, Jean-Pierre Teyssier, T. Gasseling, IEEE Microwave Magazine Device ModelingModel Extraction MeasurementsElectrical EngineeringEngineeringModel Validation Measurements	2008	30
An improved coupling method for time domain load-pull measurements Fabien de Groote, Jan Verspecht, C. Tsironis, EngineeringRadio FrequencyMeasurementEducationInstrumentation Engineering	2005	27

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