Role of Ti and Pt electrodes on resistance switching variability of HfO2-based Resistive Random Access Memory

Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3

W. Speier, Gustav Bihlmayer, Rainer Waser · Nature Materials · 2006 · 1.6K citations

Natural Sciences, Materials Science, Physics +16

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

Ugo Russo, Daniele Ielmini, C. Cagli et al. · IEEE Transactions on Electron Devices · 2009 · 380 citations

Engineering, Materials Engineering, Materials Science +17

Coupled Ionic and Electronic Transport Model of Thin‐Film Semiconductor Memristive Behavior

Dmitri B. Strukov, Julien Borghetti, R. Stanley Williams · Small · 2009 · 266 citations

Engineering, Electrical Engineering, Materials Science +17

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

L. Goux, P. Czarnecki, Y. Y. Chen et al. · Applied Physics Letters · 2010 · 229 citations

Natural Sciences, Materials Engineering, Materials Science +16

Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap

H.Y. Lee, Y.S. Chen, P.S. Chen et al. · IEEE Electron Device Letters · 2009 · 197 citations

Natural Sciences, Materials Engineering, Materials Science +13