V. Jousseaume

Catalyst preparation for CMOS-compatible silicon nanowire synthesis

V. Renard, Michaël Jublot, Patrice Gergaud et al. · Nature Nanotechnology · 2009 · 85 citations · Full text

Chemical Engineering, Engineering, Nanoelectronics +6

Chemical and structural properties of conducting nanofilaments in TiN/HfO₂-based resistive switching structures

P. Calka, E. Martínez, V. Delaye et al. · Nanotechnology · 2013 · 82 citations

Back-end-of-line compatible Conductive Bridging RAM based on Cu and SiO2

Y. Bernard, V. Renard, P. Gonon et al. · Microelectronic Engineering · 2010 · 76 citations

Electrical Engineering, Engineering, Nanoelectronics +5

Experimental and theoretical study of electrode effects in HfO<inf>2</inf> based RRAM

C. Cagli, Julien Buckley, V. Jousseaume et al. · 2011 · 71 citations · Full text

Engineering, Emerging Memory Technology, Rram Devices +17

Comparison Between E-beam and Ultraviolet Curing to Perform Porous a-SiOC:H

V. Jousseaume, A. Zenasni, L. Favennec et al. · Journal of The Electrochemical Society · 2007 · 68 citations

Optical Materials, Engineering, Nanoporous Material +17